技术参数

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 800 V
• Current - Continuous Drain (Id) @ 25°C 7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Rds On (Max) @ Id, Vgs 750mOhm @ 2.7A, 10V
• Vgs(th) (Max) @ Id 3.5V @ 140µA
• Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
• Vgs (Max) ±20V
• Input Capacitance (Ciss) (Max) @ Vds 460 pF @ 500 V
• FET Feature -
• Power Dissipation (Max) 51W (Tc)
• Operating Temperature -55°C ~ 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Through Hole
• Supplier Device Package PG-TO251-3
• Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
• Moisture Sensitivity Level (MSL) Not Applicable
• REACH Status REACH Unaffected