技术参数

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 40 V
• Current - Continuous Drain (Id) @ 25°C 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Rds On (Max) @ Id, Vgs 7.5mOhm @ 50A, 10V
• Vgs(th) (Max) @ Id 4V @ 40µA
• Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
• Vgs (Max) ±20V
• Input Capacitance (Ciss) (Max) @ Vds 2350 pF @ 25 V
• FET Feature -
• Power Dissipation (Max) 68W (Tc)
• Operating Temperature -55°C ~ 175°C (TJ)
• Grade Automotive
• Qualification AEC-Q101
• Mounting Type Surface Mount
• Supplier Device Package PG-TO252-3
• Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
• Moisture Sensitivity Level (MSL) Vendor Undefined
• REACH Status REACH Unaffected
• HTSUS 0000.00.0000