技术参数

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 75 V
• Current - Continuous Drain (Id) @ 25°C 14A (Ta), 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Rds On (Max) @ Id, Vgs 8.5mOhm @ 45A, 10V
• Vgs(th) (Max) @ Id 4V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs 77 nC @ 10 V
• Vgs (Max) ±20V
• Input Capacitance (Ciss) (Max) @ Vds 3001 pF @ 25 V
• FET Feature -
• Power Dissipation (Max) 4.4W (Ta), 125W (Tc)
• Operating Temperature -55°C ~ 175°C (TJ)
• Grade Automotive
• Qualification AEC-Q101
• Mounting Type Surface Mount
• Supplier Device Package PQFN (5x6)
• Package / Case 8-PowerTDFN
• Moisture Sensitivity Level (MSL) Vendor Undefined
• REACH Status REACH Unaffected