技术参数

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 55 V
• Current - Continuous Drain (Id) @ 25°C 89A (Tc)
• Rds On (Max) @ Id, Vgs 10mOhm @ 46A, 10V
• Vgs(th) (Max) @ Id 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs 98 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds 3600 pF @ 25 V
• FET Feature -
• Power Dissipation (Max) 170W (Tc)
• Operating Temperature -55°C ~ 175°C (TJ)
• Grade Automotive
• Qualification AEC-Q101
• Mounting Type Through Hole
• Supplier Device Package TO-220AB
• Package / Case TO-220-3
• Moisture Sensitivity Level (MSL) Vendor Undefined
• REACH Status REACH Affected