技术参数

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 12 V
• Current - Continuous Drain (Id) @ 25°C 84A (Tc)
• Rds On (Max) @ Id, Vgs 8.5mOhm @ 15A, 4.5V
• Vgs(th) (Max) @ Id 1.9V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs 41 nC @ 5 V
• Vgs (Max) ±12V
• Input Capacitance (Ciss) (Max) @ Vds 2490 pF @ 6 V
• FET Feature -
• Power Dissipation (Max) 88W (Tc)
• Operating Temperature -55°C ~ 175°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package TO-252AA (DPAK)
• Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
• Moisture Sensitivity Level (MSL) Vendor Undefined
• REACH Status REACH Unaffected