技术参数

• Part Status Active
• FET Type N-Channel
• Technology SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss) 1700 V
• Current - Continuous Drain (Id) @ 25°C 6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 20V
• Rds On (Max) @ Id, Vgs 940mOhm @ 2.5A, 20V
• Vgs(th) (Max) @ Id 3.25V @ 100µA (Typ)
• Gate Charge (Qg) (Max) @ Vgs 11 nC @ 20 V
• Vgs (Max) +23V, -10V
• Input Capacitance (Ciss) (Max) @ Vds 184 pF @ 1000 V
• FET Feature -
• Power Dissipation (Max) 63W (Tc)
• Operating Temperature -55°C ~ 175°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package D2PAK-7
• Package / Case TO-263-8, D2PAK (7 Leads + Tab)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095