技术参数

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 200 V
• Current - Continuous Drain (Id) @ 25°C 16A
• Drive Voltage (Max Rds On, Min Rds On) -
• Rds On (Max) @ Id, Vgs -
• Vgs(th) (Max) @ Id -
• Vgs (Max) -
• FET Feature -
• Power Dissipation (Max) -
• Operating Temperature -
• Mounting Type Surface Mount
• Supplier Device Package U3 (SMD-0.5)
• Package / Case 3-SMD, No Lead
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• HTSUS 8541.29.0095