技术参数

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 20 V
• Current - Continuous Drain (Id) @ 25°C 3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
• Rds On (Max) @ Id, Vgs 140mOhm @ 3A, 4.5V
• Vgs(th) (Max) @ Id 1.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs 1.5 nC @ 4.5 V
• Vgs (Max) +7V, -0.2V
• Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 10 V
• FET Feature -
• Power Dissipation (Max) 1W (Ta)
• Operating Temperature 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package DSN1006-3
• Package / Case 3-XFDFN
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• ECCN EAR99
• HTSUS 8541.29.0095