技术参数

• Part Status Active
• FET Type N-Channel
• Technology SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss) 2000 V
• Current - Continuous Drain (Id) @ 25°C 48A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
• Rds On (Max) @ Id, Vgs 64mOhm @ 20A, 18V
• Vgs(th) (Max) @ Id 5.5V @ 12.1mA
• Gate Charge (Qg) (Max) @ Vgs 82 nC @ 18 V
• Vgs (Max) +20V, -7V
• FET Feature -
• Power Dissipation (Max) 348W (Tc)
• Operating Temperature -55°C ~ 175°C (TJ)
• Grade -
• Qualification -
• Mounting Type Through Hole
• Supplier Device Package PG-TO247-4-U04
• Package / Case TO-247-4
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095