技术参数

• Part Status Discontinued at Digi-Key
• FET Type N-Channel
• Technology GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss) 600 V
• Current - Continuous Drain (Id) @ 25°C 12.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) -
• Rds On (Max) @ Id, Vgs -
• Vgs(th) (Max) @ Id 1.6V @ 960µA
• Vgs (Max) -10V
• Input Capacitance (Ciss) (Max) @ Vds 157 pF @ 400 V
• FET Feature -
• Power Dissipation (Max) 55.5W (Tc)
• Operating Temperature -40°C ~ 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package PG-TSON-8-6
• Package / Case 8-PowerTDFN
• RoHS Status ROHS3 Compliant
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095