技术参数

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 300 V
• Current - Continuous Drain (Id) @ 25°C 85mA (Tj)
• Drive Voltage (Max Rds On, Min Rds On) 4.5V
• Rds On (Max) @ Id, Vgs 25Ohm @ 120mA, 4.5V
• Vgs(th) (Max) @ Id 2.4V @ 1mA
• Vgs (Max) ±20V
• Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V
• FET Feature -
• Power Dissipation (Max) 360mW (Ta)
• Operating Temperature -55°C ~ 150°C (TA)
• Grade Automotive
• Qualification AEC-Q100
• Mounting Type Surface Mount
• Supplier Device Package 6-DFN (2x2)
• Package / Case 6-VDFN Exposed Pad
• RoHS Status ROHS3 Compliant
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.21.0095