技术参数

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 25 V
• Current - Continuous Drain (Id) @ 25°C 75A (Ta), 789A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Rds On (Max) @ Id, Vgs 0.29mOhm @ 50A, 10V
• Vgs(th) (Max) @ Id 2V @ 1.448mA
• Gate Charge (Qg) (Max) @ Vgs 254 nC @ 10 V
• Vgs (Max) ±16V
• Input Capacitance (Ciss) (Max) @ Vds 17000 pF @ 12 V
• FET Feature -
• Power Dissipation (Max) 2.5W (Ta), 278W (Tc)
• Operating Temperature -55°C ~ 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package PG-TTFN-9-U02
• Package / Case 9-PowerTDFN
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8542.39.0060