技术参数

• Part Status Obsolete
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 40 V
• Current - Continuous Drain (Id) @ 25°C 20A (Ta), 103A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Rds On (Max) @ Id, Vgs -
• Vgs(th) (Max) @ Id -
• Vgs (Max) -
• FET Feature -
• Power Dissipation (Max) 2.1W (Ta), 39W (Tc)
• Operating Temperature -55°C ~ 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package PG-VSON-6-1
• Package / Case 6-PowerVDFN
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• ECCN EAR99
• HTSUS 8541.29.0095