技术参数

• Part Status Obsolete
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 55 V
• Current - Continuous Drain (Id) @ 25°C 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Rds On (Max) @ Id, Vgs 6.6mOhm @ 68A, 10V
• Vgs(th) (Max) @ Id 4V @ 180µA
• Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
• Vgs (Max) ±20V
• Input Capacitance (Ciss) (Max) @ Vds 3400 pF @ 25 V
• FET Feature -
• Power Dissipation (Max) 250W (Tc)
• Operating Temperature -55°C ~ 175°C (TJ)
• Grade Automotive
• Qualification AEC-Q101
• Mounting Type Through Hole
• Supplier Device Package PG-TO220-3-1
• Package / Case TO-220-3
• RoHS Status ROHS3 Compliant
• ECCN EAR99
• HTSUS 8541.29.0095