Technical Details

• Part Status Obsolete
• Technology MOSFET (Metal Oxide)
• Configuration 2 P-Channel (Dual)
• FET Feature Logic Level Gate
• Drain to Source Voltage (Vdss) 20V
• Current - Continuous Drain (Id) @ 25°C 3.5A
• Rds On (Max) @ Id, Vgs 70mOhm @ 1A, 4.5V
• Vgs(th) (Max) @ Id 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds 380pF @ 10V
• Power - Max 520mW
• Operating Temperature 150°C (TJ)
• Mounting Type Surface Mount
• Package / Case 6-UDFN Exposed Pad
• Supplier Device Package 6-HUSON (2x2)