Technical Details

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 200 V
• Current - Continuous Drain (Id) @ 25°C 9.7A (Ta), 61A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 10V, 15V
• Rds On (Max) @ Id, Vgs 15.5mOhm @ 38A, 15V
• Vgs(th) (Max) @ Id 4.5V @ 105µA
• Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
• Vgs (Max) ±20V
• Input Capacitance (Ciss) (Max) @ Vds 3100 pF @ 100 V
• FET Feature -
• Power Dissipation (Max) 3.8W (Ta), 203W (Tc)
• Operating Temperature -55°C ~ 175°C (TJ)
• Grade -
• Qualification -
• Mounting Type Through Hole
• Supplier Device Package PG-TO220-3-U04
• Package / Case TO-220-3