Technical Details

• Part Status Obsolete
• FET Type P-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 20 V
• Current - Continuous Drain (Id) @ 25°C 5.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Rds On (Max) @ Id, Vgs 60mOhm @ 5.3A, 10V
• Vgs(th) (Max) @ Id 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
• Vgs (Max) ±20V
• Input Capacitance (Ciss) (Max) @ Vds 860 pF @ 10 V
• FET Feature -
• Power Dissipation (Max) 2.5W (Ta)
• Operating Temperature -55°C ~ 155°C (TJ)
• Mounting Type Surface Mount
• Supplier Device Package 8-SOIC
• Package / Case 8-SOIC (0.154", 3.90mm Width)