Technical Details

• Part Status Obsolete
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 30 V
• Current - Continuous Drain (Id) @ 25°C 4.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Rds On (Max) @ Id, Vgs 31mOhm @ 4.6A, 10V
• Vgs(th) (Max) @ Id 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
• Vgs (Max) ±16V
• Input Capacitance (Ciss) (Max) @ Vds 840 pF @ 25 V
• FET Feature -
• Power Dissipation (Max) 1W (Ta)
• Operating Temperature -55°C ~ 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package SOT-223
• Package / Case TO-261-4, TO-261AA