Technical Details

• Part Status Active
• Transistor Type NPN - Pre-Biased
• Current - Collector (Ic) (Max) 100 mA
• Voltage - Collector Emitter Breakdown (Max) 50 V
• Resistors Included R1 and R2
• Resistor - Base (R1) 4.7 kOhms
• Resistor - Emitter Base (R2) 10 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic 100mV @ 500µA, 10mA
• Current - Collector Cutoff (Max) 1µA
• Frequency - Transition 230 MHz
• Power - Max 280 mW
• Grade Automotive
• Qualification AEC-Q101
• Mounting Type Surface Mount
• Package / Case 3-XDFN Exposed Pad
• Supplier Device Package DFN1010D-3