- Product Model PDTD114EU135
- Brand NXP USA Inc.
- RoHS Yes
- Description TRANS PREBIAS
- Classification Single, Pre-Biased Bipolar Transistors
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Technical Details
- Part Status Active
- Transistor Type NPN - Pre-Biased
- Current - Collector (Ic) (Max) 500 mA
- Voltage - Collector Emitter Breakdown (Max) 50 V
- Resistors Included R1 and R2
- Resistor - Base (R1) 10 kOhms
- Resistor - Emitter Base (R2) 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic 100mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max) 500nA
- Frequency - Transition 225 MHz
- Power - Max 300 mW
- Grade Automotive
- Qualification AEC-Q101
- Mounting Type Surface Mount
- Package / Case SC-70, SOT-323
- Supplier Device Package SOT-323