Technical Details

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 40 V
• Current - Continuous Drain (Id) @ 25°C 150A (Ta)
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Rds On (Max) @ Id, Vgs 1.7mOhm @ 25A, 10V
• Vgs(th) (Max) @ Id 2.1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs 230 nC @ 10 V
• Vgs (Max) ±20V
• Input Capacitance (Ciss) (Max) @ Vds 13200 pF @ 25 V
• FET Feature -
• Power Dissipation (Max) 349W (Ta)
• Operating Temperature -55°C ~ 175°C (TJ)
• Mounting Type Through Hole
• Supplier Device Package TO-220AB
• Package / Case TO-220-3