Technical Details

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 120 V
• Current - Continuous Drain (Id) @ 25°C 70A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Rds On (Max) @ Id, Vgs 7.9mOhm @ 25A, 10V
• Vgs(th) (Max) @ Id 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs 167 nC @ 10 V
• Vgs (Max) ±20V
• Input Capacitance (Ciss) (Max) @ Vds 9473 pF @ 60 V
• FET Feature -
• Power Dissipation (Max) 349W (Tc)
• Operating Temperature -55°C ~ 175°C (TJ)
• Grade -
• Qualification -
• Mounting Type Through Hole
• Supplier Device Package I2PAK
• Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA