Technical Details

• Part Status Obsolete
• Technology MOSFET (Metal Oxide)
• Configuration 2 N-Channel (Dual)
• FET Feature Logic Level Gate
• Drain to Source Voltage (Vdss) 50V
• Current - Continuous Drain (Id) @ 25°C 100mA
• Rds On (Max) @ Id, Vgs 25Ohm @ 10mA, 10V
• Vgs(th) (Max) @ Id 1.8V @ 1µA
• Gate Charge (Qg) (Max) @ Vgs -
• Input Capacitance (Ciss) (Max) @ Vds 16pF @ 5V
• Power - Max 300mW
• Operating Temperature 150°C (TJ)
• Mounting Type Surface Mount
• Package / Case SC-59-6
• Supplier Device Package SC-59