Technical Details

• Part Status Active
• FET Type P-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 12 V
• Current - Continuous Drain (Id) @ 25°C 2.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
• Rds On (Max) @ Id, Vgs 51mOhm @ 2A, 4.5V
• Vgs(th) (Max) @ Id 1V @ 2mA
• Gate Charge (Qg) (Max) @ Vgs 10.7 nC @ 4.5 V
• Vgs (Max) ±8V
• Input Capacitance (Ciss) (Max) @ Vds 814 pF @ 10 V
• FET Feature -
• Power Dissipation (Max) 370mW (Ta)
• Operating Temperature -40°C ~ 85°C (TA)
• Grade Automotive
• Qualification AEC-Q101
• Mounting Type Surface Mount
• Supplier Device Package 4-CSP (1x1)
• Package / Case 4-XFLGA, CSP