Technical Details

• Part Status Active
• FET Type P-Channel
• Voltage - Breakdown (V(BR)GSS) 30 V
• Current - Drain (Idss) @ Vds (Vgs=0) 1 mA @ 5 V
• Voltage - Cutoff (VGS off) @ Id 750 mV @ 1 µA
• Input Capacitance (Ciss) (Max) @ Vds 10pF @ 5V
• Power - Max 300 mW
• Operating Temperature -65°C ~ 200°C (TJ)
• Mounting Type Surface Mount
• Package / Case 3-SMD, No Lead
• Supplier Device Package UB