Technical Details

• Part Status Active
• Technology MOSFET (Metal Oxide)
• Configuration -
• FET Feature -
• Drain to Source Voltage (Vdss) 20V
• Current - Continuous Drain (Id) @ 25°C 3.4A (Ta)
• Rds On (Max) @ Id, Vgs 32mOhm @ 1.7A, 4.5V
• Vgs(th) (Max) @ Id 1.4V @ 160µA
• Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 4V
• Input Capacitance (Ciss) (Max) @ Vds 426pF @ 10V
• Power - Max 420mW (Ta)
• Operating Temperature 150°C
• Grade Automotive
• Qualification AEC-Q100
• Mounting Type Surface Mount
• Package / Case 4-XFLGA, CSP
• Supplier Device Package 4-CSP (1.1x1.1)