Technical Details

• Part Status Obsolete
• Transistor Type 1 NPN Pre-Biased, 1 PNP
• Current - Collector (Ic) (Max) 100mA, 3A
• Voltage - Collector Emitter Breakdown (Max) 50V, 20V
• Resistor - Base (R1) 2.2kOhms
• Resistor - Emitter Base (R2) 2.2kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 20mA, 5V / 150 @ 2A, 2V
• Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA / 355mV @ 300mA, 3A
• Current - Collector Cutoff (Max) 1µA, 100nA
• Frequency - Transition 100MHz
• Power - Max 1.5W
• Mounting Type Surface Mount
• Package / Case 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package 8-SO