Technical Details

• Part Status Active
• Technology MOSFET (Metal Oxide)
• Configuration 2 N-Channel (Dual) Common Drain
• FET Feature -
• Drain to Source Voltage (Vdss) 20V
• Current - Continuous Drain (Id) @ 25°C 5A (Ta)
• Rds On (Max) @ Id, Vgs 11.9mOhm @ 2.5A, 4.5V
• Vgs(th) (Max) @ Id 1.4V @ 640µA
• Gate Charge (Qg) (Max) @ Vgs 23nC @ 4V
• Input Capacitance (Ciss) (Max) @ Vds 2440pF @ 10V
• Power - Max 400mW (Ta)
• Operating Temperature 150°C
• Mounting Type Surface Mount
• Package / Case 4-XFLGA, CSP
• Supplier Device Package 4-CSP (1.74x1.74)