技术参数

• Part Status Active
• Technology MOSFET (Metal Oxide)
• Configuration 2 N-Channel (Dual) Common Drain
• FET Feature -
• Drain to Source Voltage (Vdss) 12V
• Current - Continuous Drain (Id) @ 25°C 13.5A (Ta)
• Rds On (Max) @ Id, Vgs 2.75mOhm @ 6A, 4.5V
• Vgs(th) (Max) @ Id 1.4V @ 1.11mA
• Gate Charge (Qg) (Max) @ Vgs 25nC @ 4V
• Input Capacitance (Ciss) (Max) @ Vds 3570pF @ 10V
• Power - Max 540mW (Ta)
• Operating Temperature 150°C
• Mounting Type Surface Mount
• Package / Case 10-SMD, No Lead
• Supplier Device Package 10-SMD
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.21.0095